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Structural and Optical Performance of GaN Thick Film Grown by HVPE | |
Wei Tongbo![]() ![]() ![]() | |
2007 | |
Source Publication | 半导体学报
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Volume | 28Issue:1Pages:19-23 |
Abstract | Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum(FWHM)of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities. |
metadata_83 | institute of semiconductors, chinese academy of sciences |
Subject Area | 半导体材料 |
Funding Organization | 国家高技术研究发展计划资助项目 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:2741723 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16381 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Wei Tongbo,Ma Ping,Duan Ruifei,et al. Structural and Optical Performance of GaN Thick Film Grown by HVPE[J]. 半导体学报,2007,28(1):19-23. |
APA | Wei Tongbo.,Ma Ping.,Duan Ruifei.,Wang Junxi.,Li Jinmin.,...&Zeng Yiping.(2007).Structural and Optical Performance of GaN Thick Film Grown by HVPE.半导体学报,28(1),19-23. |
MLA | Wei Tongbo,et al."Structural and Optical Performance of GaN Thick Film Grown by HVPE".半导体学报 28.1(2007):19-23. |
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