SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
低能氦离子注入引入的量子阱混杂带隙波长蓝移
周静涛; 朱洪亮; 程远兵; 王宝军; 王圩
2007
Source Publication半导体学报
Volume28Issue:1Pages:47-51
Abstract提出了采用低能氦离子注入多量子阱(MQW)材料和合适的快速退火条件,实现了MQW带隙波长的蓝移.用这种材料制作了FP腔激光器,与未注入器件相比,实现了37nm的激射波长蓝移.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2741728
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16379
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周静涛,朱洪亮,程远兵,等. 低能氦离子注入引入的量子阱混杂带隙波长蓝移[J]. 半导体学报,2007,28(1):47-51.
APA 周静涛,朱洪亮,程远兵,王宝军,&王圩.(2007).低能氦离子注入引入的量子阱混杂带隙波长蓝移.半导体学报,28(1),47-51.
MLA 周静涛,et al."低能氦离子注入引入的量子阱混杂带隙波长蓝移".半导体学报 28.1(2007):47-51.
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