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AlGaN基UV—LED的研究与进展
魏同波; 王军喜; 闫建昌; 李晋闽
2007
Source Publication功能材料与器件学报
Volume13Issue:1Pages:95-100
Abstract近年来短波长紫外LED巨大的应用价值引起了人们的高度关注,成为了全球半导体领域研究和投资的新热点。本文综合分析了AlGaN材料的生长、碎裂、掺杂和欧姆接触等问题,对UV—LED的发展历程、技术路线和研究进展进行了详细介绍,并展望了未来发展方向。
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家863项目支持
Indexed ByCSCD
Language中文
CSCD IDCSCD:2756505
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16363
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
魏同波,王军喜,闫建昌,等. AlGaN基UV—LED的研究与进展[J]. 功能材料与器件学报,2007,13(1):95-100.
APA 魏同波,王军喜,闫建昌,&李晋闽.(2007).AlGaN基UV—LED的研究与进展.功能材料与器件学报,13(1),95-100.
MLA 魏同波,et al."AlGaN基UV—LED的研究与进展".功能材料与器件学报 13.1(2007):95-100.
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