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InP基MOEMS可调谐器件的梁变形模拟
吴旭明; 王小东; 何国荣; 王青; 曹玉莲; 谭满清
2007
Source Publication半导体学报
Volume28Issue:2Pages:280-283
AbstractInP基微光机电系统(MOEMS)可调谐器件的梁在实验中常出现弯曲变形的现象,其原因是在生长的时候,As原子进入InP梁,产生了内部梯度应力.使用有限元分析软件,建立了一种无须测量内部应力的模拟梁变形的方法.模拟了单臂梁和双臂梁的弯曲变形情况,理论与实验吻合.研究了As原子浓度和梁厚度对梁变形情况的影响,结果表明降低As原子浓度和增大梁厚度都有助于抑制梁的变形.
metadata_83中国科学院半导体研究所光电子研究发展中心
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:2759782
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16351
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴旭明,王小东,何国荣,等. InP基MOEMS可调谐器件的梁变形模拟[J]. 半导体学报,2007,28(2):280-283.
APA 吴旭明,王小东,何国荣,王青,曹玉莲,&谭满清.(2007).InP基MOEMS可调谐器件的梁变形模拟.半导体学报,28(2),280-283.
MLA 吴旭明,et al."InP基MOEMS可调谐器件的梁变形模拟".半导体学报 28.2(2007):280-283.
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