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MOCVD生长GaN力学性能研究
魏同波; 王军喜; 李晋闽; 刘酷; 段瑞飞
2007
Source Publication稀有金属材料与工程
Volume36Issue:3Pages:416-419
Abstract采用MOCVD技术在蓝宝石衬底(0001)面上生长了GaN外延膜,利用原子力显微镜AFM、扫描电镜SEM分析了薄膜表面形貌,利用纳米压痕仪和UMT试验机考察了GaN膜的硬度、临界载荷以及摩擦学性能等。结果表明,薄膜以二维模式均匀生长,表面平整,硬度达22.1MPa,弹性模量为299.5GPa,与衬底结合紧密,临界载荷达1.6N,与GCr15钢球对磨时摩擦系数仅为0.13,与Si3N4陶瓷球摩擦时膜很快就磨穿。
metadata_83中科院半导体研究所
Subject Area半导体材料
Funding Organization国家“863”项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2821378
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16323
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
魏同波,王军喜,李晋闽,等. MOCVD生长GaN力学性能研究[J]. 稀有金属材料与工程,2007,36(3):416-419.
APA 魏同波,王军喜,李晋闽,刘酷,&段瑞飞.(2007).MOCVD生长GaN力学性能研究.稀有金属材料与工程,36(3),416-419.
MLA 魏同波,et al."MOCVD生长GaN力学性能研究".稀有金属材料与工程 36.3(2007):416-419.
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