SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures
Han Weihua; Yomoto M; Kasai S
2007
Source Publication半导体学报
Volume28Issue:4Pages:500-506
AbstractA reproducible terahertz (THz) photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH_3OH gas laser with the frequency 2. 54THz.The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.
metadata_83research center of engineering for semiconductor integrated technology,institute of semiconductors, chinese academy of sciences;research center for integrated quantum electronics, hokkaido university
Subject Area微电子学
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2821651
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16319
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Han Weihua,Yomoto M,Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures[J]. 半导体学报,2007,28(4):500-506.
APA Han Weihua,Yomoto M,&Kasai S.(2007).Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures.半导体学报,28(4),500-506.
MLA Han Weihua,et al."Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures".半导体学报 28.4(2007):500-506.
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