SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
Yao Xiaojiang; Li Bin; Chen Yanhu; Chen Xiaojuan; Wei Ke; Li Chengzhan; Luo Weijun; WANG Xiaoliang; Liu Dan; Liu Guoguo; Liu Xinyu
2007
Source Publication半导体学报
Volume28Issue:4Pages:514-517
AbstractA power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.
metadata_83institute of microelectronics, chinese academy of sciences;longrui microelectronic corporation;institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家重点基础研究发展计划,中国科学院重点创新工程资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2821653
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16317
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yao Xiaojiang,Li Bin,Chen Yanhu,et al. AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band[J]. 半导体学报,2007,28(4):514-517.
APA Yao Xiaojiang.,Li Bin.,Chen Yanhu.,Chen Xiaojuan.,Wei Ke.,...&Liu Xinyu.(2007).AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band.半导体学报,28(4),514-517.
MLA Yao Xiaojiang,et al."AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band".半导体学报 28.4(2007):514-517.
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