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GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长
郝瑞亭; 徐应强; 周志强; 任正伟; 牛智川
2007
Source Publication半导体学报
Volume28Issue:7Pages:1088-1091
Abstract采用分子束外延方法在GaAs(100)衬底上生长GaSb体材料,以此GaSb为缓冲层生长了不同InAs厚度的InAs/GaSb超晶格,其10K光致发光谱峰值波长在2.0~2.6 μm.高分辨透射电子显微镜观察证实超晶格界面清晰,周期完整.
metadata_83中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2836011
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16307
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郝瑞亭,徐应强,周志强,等. GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长[J]. 半导体学报,2007,28(7):1088-1091.
APA 郝瑞亭,徐应强,周志强,任正伟,&牛智川.(2007).GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长.半导体学报,28(7),1088-1091.
MLA 郝瑞亭,et al."GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长".半导体学报 28.7(2007):1088-1091.
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