SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅基键合InP-InGaAsP量子阱连续激光器的研制
于丽娟; 赵洪泉; 杜云; 李敬; 黄永箴
2007
Source Publication半导体学报
Volume28Issue:7Pages:1117-1120
Abstract采用键合技术在Si基上制备了InP-InGaAsP量子阱激光器,实现了电注入室温连续工作.采用低温直接键合的方法,将Si衬底和InP-InGaAsP外延片键合在一起,并制成条宽6μm的脊波导边发射激光器.室温连续工作的1.55μm激光器阈值电流为48mA,对应的阈值电流密度和微分电阻分别为2.13kA/cm~2和5.8Ω,在约220mA时输出光功率达15mW.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家高技术研究发展计划,国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2836017
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16305
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
于丽娟,赵洪泉,杜云,等. 硅基键合InP-InGaAsP量子阱连续激光器的研制[J]. 半导体学报,2007,28(7):1117-1120.
APA 于丽娟,赵洪泉,杜云,李敬,&黄永箴.(2007).硅基键合InP-InGaAsP量子阱连续激光器的研制.半导体学报,28(7),1117-1120.
MLA 于丽娟,et al."硅基键合InP-InGaAsP量子阱连续激光器的研制".半导体学报 28.7(2007):1117-1120.
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