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PECVD沉积SiO_2和SiN_x对p-GaN的影响
陈宇; 严丽红; 王良臣
2007
Source Publication红外与激光工程
Volume36Issue:2Pages:214-218
Abstract在等离子增强化学气相沉积法(PECVD)沉积SiO_2和SiNx掩蔽层过程中,分解等离子体中浓度较高的H原子使Mg~-受主钝化,同时在p-GaN材料表面发生反应形成浅施主特性的N_v~+,空位。高能量离子轰击造成的材料深能级缺陷增多以及沉积形成致密的SiO_2和SiN_x材料,阻碍了H原子向外扩散,使H原子在Ni/Au电极与p-GaN的界面处聚集,造成p-GaN近表面附近区域Mg-H络合物密度的提高,空穴浓度急剧下降,导致Ni/Au透明电极I-V特性严重恶化。选择较低的射频功率(15W,13.56MHz)沉积模式,经过适当的退火,可以减小沉积SiO_2过程对p-GaN的影响。
metadata_83中科院半导体研究所半导体集成技术工程研究中心;贝联(上海)有限公司
Subject Area微电子学
Funding Organization国家科技攻关计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2857619
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16277
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈宇,严丽红,王良臣. PECVD沉积SiO_2和SiN_x对p-GaN的影响[J]. 红外与激光工程,2007,36(2):214-218.
APA 陈宇,严丽红,&王良臣.(2007).PECVD沉积SiO_2和SiN_x对p-GaN的影响.红外与激光工程,36(2),214-218.
MLA 陈宇,et al."PECVD沉积SiO_2和SiN_x对p-GaN的影响".红外与激光工程 36.2(2007):214-218.
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