SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs基光子晶体垂直腔面发射激光器
许兴胜; 王春霞; 宋倩; 杜伟; 胡海洋; 赵致民; 鲁琳; 阚强; 陈弘达
2007
Source Publication科学通报
Volume52Issue:10Pages:1116-1119
Abstract成功研制了光子晶体垂直腔面发射激光器,实现了连续电注入激射,工作波长为850nm,最小阈值为2mA,最大阈值为13.5mA,其中光子晶体的晶格常数在0.5~3μm范围,占空比在0.3~0.7范围.发现器件能否激射依赖于光子晶体参数,而激光器的阈值、出射功率、出射模式与光子晶体的晶格常数、占空比、缺陷大小等因素有关.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2875898
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16257
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
许兴胜,王春霞,宋倩,等. GaAs基光子晶体垂直腔面发射激光器[J]. 科学通报,2007,52(10):1116-1119.
APA 许兴胜.,王春霞.,宋倩.,杜伟.,胡海洋.,...&陈弘达.(2007).GaAs基光子晶体垂直腔面发射激光器.科学通报,52(10),1116-1119.
MLA 许兴胜,et al."GaAs基光子晶体垂直腔面发射激光器".科学通报 52.10(2007):1116-1119.
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