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InGaAs/GaAs量子点阵列中的能级计算
杨晓杰; 王青; 马文全; 陈良惠
2007
Source Publication物理学报
Volume56Issue:9Pages:5429-5435
Abstract根据八带k·p理论,在三维InGaAs/GaAs量子点阵列中求解kx=ky=kz=0 处的有效质量哈密顿H0的本征值,得到InGaAs量子点中导带中电子基态EC1,第一激发态EC2和重空穴态EHH1的能级.随着In组分从30%增加100%,InGaAs量子点中EC2到EC1的带内跃迁波长从18.50 μm 蓝移到11.87 μm,而EC1到EHH1的跃迁波长则从1.04 μm红移到1.73 μm;随着量子点高度从1.0 nm增加到 5.0 nm,In0.5Ga0.5As和InAs量子点中EC1到EC2的带内跃迁都从束缚态-连续态型转换到束缚态-束缚态型,对应于两种量子点的带内跃迁波长分别从8.12 μm (5.90 μm)红移到 53.47 μm(31.87 μm),两种量子点中EC1到EHH1的跃迁波长分别从1.13 μm(1.60 μm)红移到1.27 μm(2.01 μm).
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization中国航天科工集团三院科技创新基金(批准号:HT3Y83582 5)资助的课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:2913804
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16237
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨晓杰,王青,马文全,等. InGaAs/GaAs量子点阵列中的能级计算[J]. 物理学报,2007,56(9):5429-5435.
APA 杨晓杰,王青,马文全,&陈良惠.(2007).InGaAs/GaAs量子点阵列中的能级计算.物理学报,56(9),5429-5435.
MLA 杨晓杰,et al."InGaAs/GaAs量子点阵列中的能级计算".物理学报 56.9(2007):5429-5435.
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