SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition
LIN Tao; CAI Daomin; LI Xianjie; JIANG Li; ZHANG Guangze
2007
Source PublicationSemiconductor Photonics and Technology
Volume13Issue:3Pages:215-217
AbstractHigh performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.
metadata_83department of electronic engineering, xi'an university of technology;hebei semiconductor research institute;institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding OrganizationChinese High Technology Developing Plan(2 2AA312 4 )
Indexed ByCSCD
Language英语
CSCD IDCSCD:2924727
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16219
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
LIN Tao,CAI Daomin,LI Xianjie,et al. Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition[J]. Semiconductor Photonics and Technology,2007,13(3):215-217.
APA LIN Tao,CAI Daomin,LI Xianjie,JIANG Li,&ZHANG Guangze.(2007).Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition.Semiconductor Photonics and Technology,13(3),215-217.
MLA LIN Tao,et al."Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition".Semiconductor Photonics and Technology 13.3(2007):215-217.
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