Knowledge Management System Of Institute of Semiconductors,CAS
| Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition | |
| LIN Tao; CAI Daomin; LI Xianjie; JIANG Li; ZHANG Guangze | |
| 2007 | |
| Source Publication | Semiconductor Photonics and Technology
 |
| Volume | 13Issue:3Pages:215-217 |
| Abstract | High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz. |
| metadata_83 | department of electronic engineering, xi'an university of technology;hebei semiconductor research institute;institute of semiconductors, chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | Chinese High Technology Developing Plan(2 2AA312 4 ) |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:2924727 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/16219 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | LIN Tao,CAI Daomin,LI Xianjie,et al. Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition[J]. Semiconductor Photonics and Technology,2007,13(3):215-217. |
| APA | LIN Tao,CAI Daomin,LI Xianjie,JIANG Li,&ZHANG Guangze.(2007).Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition.Semiconductor Photonics and Technology,13(3),215-217. |
| MLA | LIN Tao,et al."Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition".Semiconductor Photonics and Technology 13.3(2007):215-217. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4002.pdf（240KB） | 限制开放 | -- | Application Full Text | |||
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