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表面等离子体调制的纳米孔径垂直腔面发射激光器
高建霞; 宋国峰; 郭宝山; 甘巧强; 陈良惠
2007
Source Publication物理学报
Volume56Issue:10Pages:5827-5830
Abstract在普通850 nm垂直腔面发射激光器基础上制备了表面等离子体调制的纳米孔径垂直腔面发射激光器.当小孔直径为200 nm,周围光栅的周期为400 nm时,在15 mA驱动电流下最大输出光功率达到了0.3 mW.介绍了该器件的制备工艺,并从实验和理论两方面分析了周期性光栅结构对光束的约束作用.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization中国科学院知识创新工程,国家高技术研究发展计划(863,批准号:2 2AA313 6 )资助的课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:2928489
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16217
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
高建霞,宋国峰,郭宝山,等. 表面等离子体调制的纳米孔径垂直腔面发射激光器[J]. 物理学报,2007,56(10):5827-5830.
APA 高建霞,宋国峰,郭宝山,甘巧强,&陈良惠.(2007).表面等离子体调制的纳米孔径垂直腔面发射激光器.物理学报,56(10),5827-5830.
MLA 高建霞,et al."表面等离子体调制的纳米孔径垂直腔面发射激光器".物理学报 56.10(2007):5827-5830.
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