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In_(0.5)Ga_(0.50As/In_(0.5)Al_(0.5)As应变耦合量子点的形貌和光学性质
杨晓杰; 马文全; 陈良惠
2007
Source Publication红外与激光工程
Volume36Issue:5Pages:705-707
Abstract提出了利用分子束外延方法生长In_(0.5)Ga_(0.5)As/In_(0.5)Al_(0.5)As应变耦合量子点,并分析量子点的形貌和光学性质随GaAs隔离层厚度变化的特点.实验结果表明,随着耦合量子点中的GaAs隔离层厚度从2 nm增加到10 nm,In_(0.5)Ga_(0.5)As量子点的密度增大、均匀性提高,Al原子扩散和浸润层对量子点PL谱的影响被消除,而且InAlAs材料的宽禁带特征使其成为InGaAs量子点红外探测器中的暗电流阻挡层.由此可见,选择合适的GaAs隔离层厚度形成InGaAs/InAlAs应变耦合量子点将有益于InGaAs量子点红外探测器的研究.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization中国航天科工集团三院科技创新基金资助项目(HT3Y83582 5 4)
Indexed ByCSCD
Language中文
CSCD IDCSCD:2935466
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16211
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨晓杰,马文全,陈良惠. In_(0.5)Ga_(0.50As/In_(0.5)Al_(0.5)As应变耦合量子点的形貌和光学性质[J]. 红外与激光工程,2007,36(5):705-707.
APA 杨晓杰,马文全,&陈良惠.(2007).In_(0.5)Ga_(0.50As/In_(0.5)Al_(0.5)As应变耦合量子点的形貌和光学性质.红外与激光工程,36(5),705-707.
MLA 杨晓杰,et al."In_(0.5)Ga_(0.50As/In_(0.5)Al_(0.5)As应变耦合量子点的形貌和光学性质".红外与激光工程 36.5(2007):705-707.
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