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Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET
WANG Ningjuan; LI Ning; LIU Zhongli; ZHANG GuoQiang; YU Fang; Zheng Zhongshan; LI Guohua
2007
Source Publication功能材料与器件学报
Volume13Issue:5Pages:426-430
AbstractRadiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.
metadata_83institute of semicongductors,cas
Subject Area微电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:2939078
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16201
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
WANG Ningjuan,LI Ning,LIU Zhongli,et al. Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET[J]. 功能材料与器件学报,2007,13(5):426-430.
APA WANG Ningjuan.,LI Ning.,LIU Zhongli.,ZHANG GuoQiang.,YU Fang.,...&LI Guohua.(2007).Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET.功能材料与器件学报,13(5),426-430.
MLA WANG Ningjuan,et al."Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET".功能材料与器件学报 13.5(2007):426-430.
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