SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
n-GaAs和p-GaN晶片的直接键合
李慧; 何国荣; 渠红伟; 石岩; 种明; 曹玉莲; 陈良惠
2007
Source Publication半导体学报
Volume28Issue:11Pages:1815-1817
Abstract采用直接键合的方法成功实现了n-GaAs和p-GaN晶片的高质量键合.扫描电子显微镜观测结果表明,键合界面没有空洞.键合前后光致发光谱测试表明,键合工艺对材料质量影响不大.室温下界面的电流-电压特性表明,键合得到的n-GaAs/p-GaN异质结为肖特基二极管并且理想因子为1.08.n-GaAs和p-GaN材料直接键合的成功对于集成GaAs和GaN材料制备光电集成器件有重要意义.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:2947831
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16195
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李慧,何国荣,渠红伟,等. n-GaAs和p-GaN晶片的直接键合[J]. 半导体学报,2007,28(11):1815-1817.
APA 李慧.,何国荣.,渠红伟.,石岩.,种明.,...&陈良惠.(2007).n-GaAs和p-GaN晶片的直接键合.半导体学报,28(11),1815-1817.
MLA 李慧,et al."n-GaAs和p-GaN晶片的直接键合".半导体学报 28.11(2007):1815-1817.
Files in This Item:
File Name/Size DocType Version Access License
3990.pdf(385KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[李慧]'s Articles
[何国荣]'s Articles
[渠红伟]'s Articles
Baidu academic
Similar articles in Baidu academic
[李慧]'s Articles
[何国荣]'s Articles
[渠红伟]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[李慧]'s Articles
[何国荣]'s Articles
[渠红伟]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.