SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
功率型GaN基LED静电保护方法研究
王立彬; 刘志强; 陈宇; 伊晓燕; 马龙; 潘领峰; 王良臣
2007
Source Publication半导体光电
Volume28Issue:4Pages:474-477
Abstract介绍了几种常用的GaN基大功率白光发光二极管(LED)静电保护的方法,分析了GaN基大功率白光LED静电损伤的机理,并在此基础上,提出了改善GaN基大功率白光LED的抗静电损伤的途径与方法。
metadata_83中国科学院半导体研究所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:2950560
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16191
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王立彬,刘志强,陈宇,等. 功率型GaN基LED静电保护方法研究[J]. 半导体光电,2007,28(4):474-477.
APA 王立彬.,刘志强.,陈宇.,伊晓燕.,马龙.,...&王良臣.(2007).功率型GaN基LED静电保护方法研究.半导体光电,28(4),474-477.
MLA 王立彬,et al."功率型GaN基LED静电保护方法研究".半导体光电 28.4(2007):474-477.
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