SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition
Shi Huiling; Ma Xiaoyu; Hu Like; Chong Feng
2008
Source Publication半导体学报
Volume29Issue:1Pages:12-16
AbstractZnO thin films were grown on GaAs (001) substrates by metal-organic chemical vapor deposition (MOCVD) at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement (XRD) results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy (SEM) image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge (3. 33eV) emissions with little or no deep-level e- mission related to defects.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:3205884
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16143
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Shi Huiling,Ma Xiaoyu,Hu Like,et al. Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition[J]. 半导体学报,2008,29(1):12-16.
APA Shi Huiling,Ma Xiaoyu,Hu Like,&Chong Feng.(2008).Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition.半导体学报,29(1),12-16.
MLA Shi Huiling,et al."Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition".半导体学报 29.1(2008):12-16.
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