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题名: Optical and Electrical Properties of GaN.Mg Grown by MOCVD
作者: Yu Chichi;  Zhang Shuming;  Yang Hui;  Liang Junya
发表日期: 2008
摘要: Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature (RT) Hall and photoluminescence (PL) spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV (BL) and the ultraviolet emission band is around 3.27eV (UVL). The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yu Chichi;Zhang Shuming;Yang Hui;Liang Junya.Optical and Electrical Properties of GaN.Mg Grown by MOCVD,半导体学报,2008,29(1):29-32
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