Optical and Electrical Properties of GaN.Mg Grown by MOCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical and Electrical Properties of GaN.Mg Grown by MOCVD
	Yu Chichi; Zhang Shuming; Yang Hui; Liang Junya
	2008
Source Publication	半导体学报
Volume	29 Issue:1 Pages:29-32
Abstract	Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature （RT） Hall and photoluminescence （PL） spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV （BL） and the ultraviolet emission band is around 3.27eV （UVL）. The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.
metadata_83	institute of semiconductors, chinese academy of sciences
Subject Area	光电子学
Funding Organization	国家自然科学基金资助项目（批准号
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:3205888
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16141
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Yu Chichi,Zhang Shuming,Yang Hui,et al. Optical and Electrical Properties of GaN.Mg Grown by MOCVD[J]. 半导体学报,2008,29(1):29-32.
APA	Yu Chichi,Zhang Shuming,Yang Hui,&Liang Junya.(2008).Optical and Electrical Properties of GaN.Mg Grown by MOCVD.半导体学报,29(1),29-32.
MLA	Yu Chichi,et al."Optical and Electrical Properties of GaN.Mg Grown by MOCVD".半导体学报 29.1(2008):29-32.

Files in This Item:
File Name/Size	DocType	Version	Access	License
3945.pdf（451KB）			限制开放	--	Application Full Text

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库