SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Optical and Electrical Properties of GaN.Mg Grown by MOCVD
Yu Chichi; Zhang Shuming; Yang Hui; Liang Junya
2008
Source Publication半导体学报
Volume29Issue:1Pages:29-32
AbstractMg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature (RT) Hall and photoluminescence (PL) spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10~(17) cm~(-3) and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV (BL) and the ultraviolet emission band is around 3.27eV (UVL). The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when theannealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10~(18)cm~(-3) appear to be related not only to hydrogen passivation, but also to self-compensation.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金资助项目(批准号
Indexed ByCSCD
Language英语
CSCD IDCSCD:3205888
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16141
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yu Chichi,Zhang Shuming,Yang Hui,et al. Optical and Electrical Properties of GaN.Mg Grown by MOCVD[J]. 半导体学报,2008,29(1):29-32.
APA Yu Chichi,Zhang Shuming,Yang Hui,&Liang Junya.(2008).Optical and Electrical Properties of GaN.Mg Grown by MOCVD.半导体学报,29(1),29-32.
MLA Yu Chichi,et al."Optical and Electrical Properties of GaN.Mg Grown by MOCVD".半导体学报 29.1(2008):29-32.
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