Knowledge Management System Of Institute of Semiconductors,CAS
Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing | |
Zeng Yugang; Han Genquan; Yu Jinzhong | |
2008 | |
Source Publication | 半导体学报
![]() |
Volume | 29Issue:4Pages:641-644 |
Abstract | Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,~20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20~25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM. |
metadata_83 | institute of semiconductors,chinese academy of sciences |
Subject Area | 光电子学 |
Funding Organization | 国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:G2 366 5)资助项目 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:3242302 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16109 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Zeng Yugang,Han Genquan,Yu Jinzhong. Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing[J]. 半导体学报,2008,29(4):641-644. |
APA | Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing.半导体学报,29(4),641-644. |
MLA | Zeng Yugang,et al."Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing".半导体学报 29.4(2008):641-644. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
3929.pdf(489KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment