SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
Zeng Yugang; Han Genquan; Yu Jinzhong
2008
Source Publication半导体学报
Volume29Issue:4Pages:641-644
AbstractGe self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,~20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20~25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:G2 366 5)资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:3242302
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16109
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zeng Yugang,Han Genquan,Yu Jinzhong. Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing[J]. 半导体学报,2008,29(4):641-644.
APA Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing.半导体学报,29(4),641-644.
MLA Zeng Yugang,et al."Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing".半导体学报 29.4(2008):641-644.
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