Knowledge Management System Of Institute of Semiconductors,CAS
| Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing | |
| Zeng Yugang; Han Genquan; Yu Jinzhong | |
| 2008 | |
| Source Publication | 半导体学报
 |
| Volume | 29Issue:4Pages:641-644 |
| Abstract | Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM. |
| metadata_83 | institute of semiconductors,chinese academy of sciences |
| Subject Area | 光电子学 |
| Funding Organization | 国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:G2 366 5)资助项目 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3242302 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/16109 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Zeng Yugang,Han Genquan,Yu Jinzhong. Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing[J]. 半导体学报,2008,29(4):641-644. |
| APA | Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing.半导体学报,29(4),641-644. |
| MLA | Zeng Yugang,et al."Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing".半导体学报 29.4(2008):641-644. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3929.pdf（489KB） | 限制开放 | -- | Application Full Text | |||
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