SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors
Zhang Wancheng; Wu Nanjian
2008
Source Publication半导体学报
Volume29Issue:4Pages:693-700
AbstractThis paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area微电子学
Funding Organization国家自然科学基金(批准号:9 6 7 7),国家重点基础研究发展规划(批准号:2 6CB9212 1)资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:3242313
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16105
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhang Wancheng,Wu Nanjian. A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors[J]. 半导体学报,2008,29(4):693-700.
APA Zhang Wancheng,&Wu Nanjian.(2008).A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors.半导体学报,29(4),693-700.
MLA Zhang Wancheng,et al."A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors".半导体学报 29.4(2008):693-700.
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