Knowledge Management System Of Institute of Semiconductors,CAS
A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator | |
Liao Zaiyi; Pan Jiaoqing![]() | |
2008 | |
Source Publication | 半导体学报
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Volume | 29Issue:5Pages:898-902 |
Abstract | A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s. |
metadata_83 | institute of semiconductors, chinese academy of sciences |
Subject Area | 半导体器件 |
Funding Organization | National Natural Science Foundation of China (No. 9 4 1 25),国家自然科学基金资助项目(批准号:9 4 1 25) |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:3266015 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16081 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Liao Zaiyi,Pan Jiaoqing,Zhou Fan,et al. A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator[J]. 半导体学报,2008,29(5):898-902. |
APA | Liao Zaiyi.,Pan Jiaoqing.,Zhou Fan.,Bian Jing.,Zhu Hongliang.,...&Wang Wei.(2008).A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator.半导体学报,29(5),898-902. |
MLA | Liao Zaiyi,et al."A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator".半导体学报 29.5(2008):898-902. |
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