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两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律
商丽燕; 林铁; 周文政; 郭少令; 李东临; 高宏玲; 崔利杰; 曾一平; 褚君浩
2008
Source Publication物理学报
Volume57Issue:6Pages:3818-3822
Abstract研究了低温(1.5K)和强磁场(0-13T)条件下,InP基In_(0.53)Ga_(0.47)As/In_(0.52)A_(l0.48)As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即⊿E_(21)=κ*ω_c(其中κ为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即⊿E_(21)=(2κ+1*ω/2,填充因子出现奇数.
metadata_83中国科学院上海技术物理研究所;中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金(批准号:6 2215 2)资助的课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:3280975
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16079
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
商丽燕,林铁,周文政,等. 两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律[J]. 物理学报,2008,57(6):3818-3822.
APA 商丽燕.,林铁.,周文政.,郭少令.,李东临.,...&褚君浩.(2008).两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律.物理学报,57(6),3818-3822.
MLA 商丽燕,et al."两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律".物理学报 57.6(2008):3818-3822.
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