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A面(11-20)ZnO薄膜中杂质的偏振PL谱研究
周立; 陈涌海; 金鹏; 王占国
2008
Source Publication光散射学报
Volume20Issue:2Pages:186-189
Abstract本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源.低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:3309709
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16043
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周立,陈涌海,金鹏,等. A面(11-20)ZnO薄膜中杂质的偏振PL谱研究[J]. 光散射学报,2008,20(2):186-189.
APA 周立,陈涌海,金鹏,&王占国.(2008).A面(11-20)ZnO薄膜中杂质的偏振PL谱研究.光散射学报,20(2),186-189.
MLA 周立,et al."A面(11-20)ZnO薄膜中杂质的偏振PL谱研究".光散射学报 20.2(2008):186-189.
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