Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

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	Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography
	Yang Xiang; Han Weihua; Wang Ying; Zhang Yang; Yang Fuhua
	2008
Source Publication	半导体学报
Volume	29 Issue:6 Pages:1057-1061
Abstract	Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The mini-mum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy(SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
metadata_83	research center of engineering for semiconductor integrated technology, institute of semiconductors, chinese academy of seiences
Subject Area	微电子学
Funding Organization	国家自然科学基金(批准号:6 5 6 17,6 776 59),国家高技术研究发展计划(批准号:2 7AA 323 3)资助项目
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:3312234
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16041
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Yang Xiang,Han Weihua,Wang Ying,et al. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. 半导体学报,2008,29(6):1057-1061.
APA	Yang Xiang,Han Weihua,Wang Ying,Zhang Yang,&Yang Fuhua.(2008).Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography.半导体学报,29(6),1057-1061.
MLA	Yang Xiang,et al."Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography".半导体学报 29.6(2008):1057-1061.

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