Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The mini-mum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy(SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
Yang Xiang;Han Weihua;Wang Ying;Zhang Yang;Yang Fuhua.Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography,半导体学报,2008,29(6):1057-1061
