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Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography | |
Yang Xiang![]() ![]() ![]() | |
2008 | |
Source Publication | 半导体学报
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Volume | 29Issue:6Pages:1057-1061 |
Abstract | Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The mini-mum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy(SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces. |
metadata_83 | research center of engineering for semiconductor integrated technology, institute of semiconductors, chinese academy of seiences |
Subject Area | 微电子学 |
Funding Organization | 国家自然科学基金(批准号:6 5 6 17,6 776 59),国家高技术研究发展计划(批准号:2 7AA 323 3)资助项目 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:3312234 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/16041 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Yang Xiang,Han Weihua,Wang Ying,et al. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. 半导体学报,2008,29(6):1057-1061. |
APA | Yang Xiang,Han Weihua,Wang Ying,Zhang Yang,&Yang Fuhua.(2008).Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography.半导体学报,29(6),1057-1061. |
MLA | Yang Xiang,et al."Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography".半导体学报 29.6(2008):1057-1061. |
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