SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography
Yang Xiang; Han Weihua; Wang Ying; Zhang Yang; Yang Fuhua
2008
Source Publication半导体学报
Volume29Issue:6Pages:1057-1061
AbstractSilicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The mini-mum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy(SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
metadata_83research center of engineering for semiconductor integrated technology, institute of semiconductors, chinese academy of seiences
Subject Area微电子学
Funding Organization国家自然科学基金(批准号:6 5 6 17,6 776 59),国家高技术研究发展计划(批准号:2 7AA 323 3)资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:3312234
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16041
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yang Xiang,Han Weihua,Wang Ying,et al. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography[J]. 半导体学报,2008,29(6):1057-1061.
APA Yang Xiang,Han Weihua,Wang Ying,Zhang Yang,&Yang Fuhua.(2008).Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography.半导体学报,29(6),1057-1061.
MLA Yang Xiang,et al."Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography".半导体学报 29.6(2008):1057-1061.
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