SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)
NIU Zhihong; REN Zhengwei; HE Zhenhong
2008
Source Publication光子学报
Volume37Issue:6Pages:1107-1111
AbstractStep like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.
metadata_83light industry division of shanxi vocational technology comprehensive college;institute of semiconductors, chinese academy sciences
Subject Area半导体物理
Funding OrganizationSupported by National Natural Science Foundation of China(6 176 6)
Indexed ByCSCD
Language英语
CSCD IDCSCD:3312725
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16037
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
NIU Zhihong,REN Zhengwei,HE Zhenhong. Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)[J]. 光子学报,2008,37(6):1107-1111.
APA NIU Zhihong,REN Zhengwei,&HE Zhenhong.(2008).Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE).光子学报,37(6),1107-1111.
MLA NIU Zhihong,et al."Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)".光子学报 37.6(2008):1107-1111.
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