SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs基InAs量子点中类氢杂质的束缚能
郑文礼; 李志文; 李树深; 王雪峰
2008
Source Publication大学物理
Volume27Issue:6Pages:26-30
Abstract在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.
metadata_83承德民族师范高等专科学校物理系;中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金资助项目(6 521 1)
Indexed ByCSCD
Language中文
CSCD IDCSCD:3328520
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16027
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑文礼,李志文,李树深,等. GaAs基InAs量子点中类氢杂质的束缚能[J]. 大学物理,2008,27(6):26-30.
APA 郑文礼,李志文,李树深,&王雪峰.(2008).GaAs基InAs量子点中类氢杂质的束缚能.大学物理,27(6),26-30.
MLA 郑文礼,et al."GaAs基InAs量子点中类氢杂质的束缚能".大学物理 27.6(2008):26-30.
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