SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD
Ma Zhifang; Wang Yutian; Jiang Desheng; Zhao Degang; Zhang Shuming; Zhu Jianjun; Liu Zongshun; Sun Baojuan; Duan Ruifei; Yang Hui; Liang Junwu
2008
Source Publication半导体学报
Volume29Issue:7Pages:1242-1245
AbstractHigh-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clusters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.
metadata_83institute of semiconductors, chinese academy of sciences;research and development center for semiconductor lighting, institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:6 5 6 1,6 476 21,6 576 3),国家重点基础研究发展规划(批准号:2 7CB9367 )资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:3330170
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16021
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ma Zhifang,Wang Yutian,Jiang Desheng,et al. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. 半导体学报,2008,29(7):1242-1245.
APA Ma Zhifang.,Wang Yutian.,Jiang Desheng.,Zhao Degang.,Zhang Shuming.,...&Liang Junwu.(2008).Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD.半导体学报,29(7),1242-1245.
MLA Ma Zhifang,et al."Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD".半导体学报 29.7(2008):1242-1245.
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