SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates
Zhao Yongmei; Sun Guosheng; Ning Jin; Liu Xingfang; Zhao Wanshun; Wang Lei; Li Jinmin
2008
Source Publication半导体学报
Volume29Issue:7Pages:1254-1257
AbstractHeteroepitaxial growth of 3C-SiC on patterned Si substrates by low pressure chemical vapor deposition (LPCVD) has been investigated to improve the crystal quality of 3C-SiC films. Si substrates were patterned with parallel lines, 1 to 10μm wide and spaced 1 to 10μm apart, which was carried out by photolithography and reactive ion etching. Growth behavior on the patterned substrates was systematically studied by scanning electron microscopy (SEM). An air gap structure and a spherical shape were formed on the patterned Si substrates with different dimensions. The air gap formed after coalescence reduced the stress in the 3C-SiC films, solving the wafer warp and making it possible to grow thicker films. XRD patterns indicated that the films grown on the maskless patterned Si substrates were mainly composed of crystal planes with (111) orientation.
metadata_83novel semiconductor material laboratory, institute of semiconductors, chinese academy of sciences;state key laboratories of transducer technology
Subject Area半导体材料
Funding Organization国家自然科学基金(批准号:6 4 6 1 , 71317 ),国家高技术研究发展计划(批准号,2 6AA 4Z339)资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:3330173
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16019
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Yongmei,Sun Guosheng,Ning Jin,et al. Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates[J]. 半导体学报,2008,29(7):1254-1257.
APA Zhao Yongmei.,Sun Guosheng.,Ning Jin.,Liu Xingfang.,Zhao Wanshun.,...&Li Jinmin.(2008).Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates.半导体学报,29(7),1254-1257.
MLA Zhao Yongmei,et al."Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates".半导体学报 29.7(2008):1254-1257.
Files in This Item:
File Name/Size DocType Version Access License
3857.pdf(424KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhao Yongmei]'s Articles
[Sun Guosheng]'s Articles
[Ning Jin]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhao Yongmei]'s Articles
[Sun Guosheng]'s Articles
[Ning Jin]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhao Yongmei]'s Articles
[Sun Guosheng]'s Articles
[Ning Jin]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.