Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy

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	Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy
	Liu Lei; Chen Nuofu; Yang Xiaoli; Wang Yu; Gao Fubao
	2008
Source Publication	半导体学报
Volume	29 Issue:7 Pages:1258-1262
Abstract	Lattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy. Mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. The composition of the Ga_(1-x)In_xAs_ySb_(1-y) layer was characterized by energy dispersive X-ray analysis with the result that x = 0.2, y = 0.17. The absorption edges of the Ga_(1-x)In_xAs_ySb_(1-y) films were determined to be 2. 256μm at room temperature by Fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55eV. Hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(V·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. Finally, GaInAsSb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.
metadata_83	institute of semiconductors, chinese academy of sciences
Subject Area	半导体材料
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:3330174
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/16017
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Liu Lei,Chen Nuofu,Yang Xiaoli,et al. Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy[J]. 半导体学报,2008,29(7):1258-1262.
APA	Liu Lei,Chen Nuofu,Yang Xiaoli,Wang Yu,&Gao Fubao.(2008).Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy.半导体学报,29(7),1258-1262.
MLA	Liu Lei,et al."Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy".半导体学报 29.7(2008):1258-1262.

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