SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy
Liu Lei; Chen Nuofu; Yang Xiaoli; Wang Yu; Gao Fubao
2008
Source Publication半导体学报
Volume29Issue:7Pages:1258-1262
AbstractLattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy. Mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. The composition of the Ga_(1-x)In_xAs_ySb_(1-y) layer was characterized by energy dispersive X-ray analysis with the result that x = 0.2, y = 0.17. The absorption edges of the Ga_(1-x)In_xAs_ySb_(1-y) films were determined to be 2. 256μm at room temperature by Fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55eV. Hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(V·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. Finally, GaInAsSb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:3330174
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16017
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liu Lei,Chen Nuofu,Yang Xiaoli,et al. Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy[J]. 半导体学报,2008,29(7):1258-1262.
APA Liu Lei,Chen Nuofu,Yang Xiaoli,Wang Yu,&Gao Fubao.(2008).Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy.半导体学报,29(7),1258-1262.
MLA Liu Lei,et al."Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy".半导体学报 29.7(2008):1258-1262.
Files in This Item:
File Name/Size DocType Version Access License
3856.pdf(1067KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu Lei]'s Articles
[Chen Nuofu]'s Articles
[Yang Xiaoli]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu Lei]'s Articles
[Chen Nuofu]'s Articles
[Yang Xiaoli]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu Lei]'s Articles
[Chen Nuofu]'s Articles
[Yang Xiaoli]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.