SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode
Liu Yuntao; Song Guofeng; Chen Lianghui
2008
Source Publication半导体学报
Volume29Issue:7Pages:1274-1277
AbstractWe solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.
metadata_83nano optoelectronic laboratory, institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:3330177
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16015
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liu Yuntao,Song Guofeng,Chen Lianghui. Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode[J]. 半导体学报,2008,29(7):1274-1277.
APA Liu Yuntao,Song Guofeng,&Chen Lianghui.(2008).Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode.半导体学报,29(7),1274-1277.
MLA Liu Yuntao,et al."Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode".半导体学报 29.7(2008):1274-1277.
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