SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
ZnAl_2O_4缓冲层对ZnO外延层晶体质量的影响
何金孝; 段垚; 王晓峰; 崔军朋; 曾一平; 李晋闽
2008
Source Publication半导体学报
Volume29Issue:7Pages:1334-1337
Abstract首次报道了通过引入ZnAl_2O_4缓冲层,以金属源化学气相外延法(MVPE)生长的ZnO晶体质量明显提高.ZnAl_2O_4缓冲层是通过对溶胶-凝胶法制备的ZnO薄膜进行高温退火而得到的.用双晶X射线衍射仪(DCXRD)对样品进行了θ-2θ和摇摆曲线测量,在ZnAl_2O_4缓冲层上生长的ZnO厚膜具有高度的择优取向性和良好的晶体质量(摇摆曲线半高宽为342").用电子扫描显微镜(SEM)观察样品横截面,并测得样品厚度约为10μm.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:3330188
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16009
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
何金孝,段垚,王晓峰,等. ZnAl_2O_4缓冲层对ZnO外延层晶体质量的影响[J]. 半导体学报,2008,29(7):1334-1337.
APA 何金孝,段垚,王晓峰,崔军朋,曾一平,&李晋闽.(2008).ZnAl_2O_4缓冲层对ZnO外延层晶体质量的影响.半导体学报,29(7),1334-1337.
MLA 何金孝,et al."ZnAl_2O_4缓冲层对ZnO外延层晶体质量的影响".半导体学报 29.7(2008):1334-1337.
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