SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Cl2/Ar/BCl3ICP刻蚀对AIGaN的损伤研究
陈亮; 亢勇; 赵德刚; 李向阳; 龚海梅
2008
Source Publication固体电子学研究与进展
Volume28Issue:3Pages:420-423
Abstract感应耦合等离子体(ICP)刻蚀在AlGaN基紫外探测器台面制作中起着重要作用,初步研究了Cl2/Ar/BCl3ICP刻蚀对A1GaN材料的损伤。运用X射线光电子能谱(XPS)对ICP刻蚀前后的n型Al0.45Ga0.55N表面进行了分析,并对刻蚀后AlGaN材料在N2气中快速热退火进行了研究。结果表明,在N2气中550℃退火3min对材料的电学性能有明显的改善作用。
metadata_83中国科学院上海技术物理研究所;中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:3384687
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15967
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈亮,亢勇,赵德刚,等. Cl2/Ar/BCl3ICP刻蚀对AIGaN的损伤研究[J]. 固体电子学研究与进展,2008,28(3):420-423.
APA 陈亮,亢勇,赵德刚,李向阳,&龚海梅.(2008).Cl2/Ar/BCl3ICP刻蚀对AIGaN的损伤研究.固体电子学研究与进展,28(3),420-423.
MLA 陈亮,et al."Cl2/Ar/BCl3ICP刻蚀对AIGaN的损伤研究".固体电子学研究与进展 28.3(2008):420-423.
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