SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
Chen Zhigang; Zhang Yang; Luo Weijun; Zhang Renping; Yang Fuhua; Wang Xiaoliang; Li Jinmin
2008
Source Publication半导体学报
Volume29Issue:9Pages:1654-1656
AbstractWe propose and fabricate an A1GaN/GaN high electron mobility transistor (HEMT) on sapphire substrate using a new kind of electron beam (EB) lithography layout for the T-gate. Using this new layout,we can change the aspect ratio (ratio of top gate dimension to gate length) and modify the shape of the T-gate freely. Therefore, we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency (f_T) of 65GHz. The aspect ratio of the T-gate is 10. These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:3399073
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15963
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Chen Zhigang,Zhang Yang,Luo Weijun,et al. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. 半导体学报,2008,29(9):1654-1656.
APA Chen Zhigang.,Zhang Yang.,Luo Weijun.,Zhang Renping.,Yang Fuhua.,...&Li Jinmin.(2008).A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design.半导体学报,29(9),1654-1656.
MLA Chen Zhigang,et al."A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design".半导体学报 29.9(2008):1654-1656.
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