SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing
Liu Hongbo; Zhao Lingjuan; Kan Qiang; Pan Jiaoqing; Wang Lu; Zhu Hongliang; Zhou Fan; Wang Wei
2008
Source Publication半导体学报
Volume29Issue:9Pages:1657-1660
AbstractThis paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in mainland China. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:9 4 1 25,6 736 36,6 7 6 9,6 777 21),国家重点基础发展研究计划(批注号:2 6AA 1Z256,2 7AA 3Z419,2 7AA 3ZA17)资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:3399074
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15961
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liu Hongbo,Zhao Lingjuan,Kan Qiang,et al. Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J]. 半导体学报,2008,29(9):1657-1660.
APA Liu Hongbo.,Zhao Lingjuan.,Kan Qiang.,Pan Jiaoqing.,Wang Lu.,...&Wang Wei.(2008).Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing.半导体学报,29(9),1657-1660.
MLA Liu Hongbo,et al."Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing".半导体学报 29.9(2008):1657-1660.
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