Knowledge Management System Of Institute of Semiconductors,CAS
| Characterization of Phosphorus Diffused ZnO Bulk Single Crystals | |
| Zhang Rui; Zhang Fan; Zhao Youwen; Dong Zhiyuan; Yang Jun | |
| 2008 | |
| Source Publication | 半导体学报
 |
| Volume | 29Issue:9Pages:1674-1678 |
| Abstract | Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration. |
| metadata_83 | material science centre, institute of semiconductors, chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | 国家自然科学基金资助项目（批准号 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3399078 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/15959 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Zhang Rui,Zhang Fan,Zhao Youwen,et al. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. 半导体学报,2008,29(9):1674-1678. |
| APA | Zhang Rui,Zhang Fan,Zhao Youwen,Dong Zhiyuan,&Yang Jun.(2008).Characterization of Phosphorus Diffused ZnO Bulk Single Crystals.半导体学报,29(9),1674-1678. |
| MLA | Zhang Rui,et al."Characterization of Phosphorus Diffused ZnO Bulk Single Crystals".半导体学报 29.9(2008):1674-1678. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3809.pdf（647KB） | 限制开放 | -- | Application Full Text | |||
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