SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression
Wu Meng; Lin Feng; Yang Fuhua; Cao Yanming
2008
Source Publication半导体学报
Volume29Issue:9Pages:1686-1691
AbstractA Geiger mode planar InGaAs/InP avalanche photodiode (APD) with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10~5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:3399081
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15957
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wu Meng,Lin Feng,Yang Fuhua,et al. A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression[J]. 半导体学报,2008,29(9):1686-1691.
APA Wu Meng,Lin Feng,Yang Fuhua,&Cao Yanming.(2008).A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression.半导体学报,29(9),1686-1691.
MLA Wu Meng,et al."A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression".半导体学报 29.9(2008):1686-1691.
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