A Planar InGaAs/InP Geiger Mode Avalanche Photodiode  with Cascade Edge Breakdown Suppression

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression
	Wu Meng; Lin Feng; Yang Fuhua; Cao Yanming
	2008
Source Publication	半导体学报
Volume	29 Issue:9 Pages:1686-1691
Abstract	A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10~5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.
metadata_83	institute of semiconductors, chinese academy of sciences
Subject Area	半导体材料
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:3399081
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/15957
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Wu Meng,Lin Feng,Yang Fuhua,et al. A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression[J]. 半导体学报,2008,29(9):1686-1691.
APA	Wu Meng,Lin Feng,Yang Fuhua,&Cao Yanming.(2008).A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression.半导体学报,29(9),1686-1691.
MLA	Wu Meng,et al."A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression".半导体学报 29.9(2008):1686-1691.

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