SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth of SiGe by D-UHV/CVD at Low Temperature
Zeng Yugang; Han Genquan; Yu Jinzhong
2008
Source Publication半导体学报
Volume29Issue:10Pages:1889-1892
AbstractThe temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.
metadata_83beijing institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号
Indexed ByCSCD
Language英语
CSCD IDCSCD:3399339
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15945
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zeng Yugang,Han Genquan,Yu Jinzhong. Growth of SiGe by D-UHV/CVD at Low Temperature[J]. 半导体学报,2008,29(10):1889-1892.
APA Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Growth of SiGe by D-UHV/CVD at Low Temperature.半导体学报,29(10),1889-1892.
MLA Zeng Yugang,et al."Growth of SiGe by D-UHV/CVD at Low Temperature".半导体学报 29.10(2008):1889-1892.
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