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掺Sb的ZnO单晶的缺陷和性质研究
张瑞; 张方; 赵有文; 董志远; 杨俊
2008
Source Publication半导体学报
Volume29Issue:10Pages:1988-1991
Abstract采用化学气相传输法生长了掺Sb的ZnO体单晶,生长温度为950℃.与非掺ZnO单晶相比,掺Sb后ZnO单晶仍为n型,其自由电子浓度明显升高.X射线光电子能谱(XPS)测量结果表明,掺入的Sb在ZnO单晶中可能占据了Zn位,或处于间隙位置,形成了施主.利用光致发光谱(PL)测量发现掺Sb后ZnO单晶发出蓝光,该蓝色荧光与浅施主有关.这些结果表明在高温生长条件下,掺Sb后ZnO单晶中产生了高浓度的施主缺陷,因而难以获得p型材料.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目(批准号
Indexed ByCSCD
Language中文
CSCD IDCSCD:3399357
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15939
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张瑞,张方,赵有文,等. 掺Sb的ZnO单晶的缺陷和性质研究[J]. 半导体学报,2008,29(10):1988-1991.
APA 张瑞,张方,赵有文,董志远,&杨俊.(2008).掺Sb的ZnO单晶的缺陷和性质研究.半导体学报,29(10),1988-1991.
MLA 张瑞,et al."掺Sb的ZnO单晶的缺陷和性质研究".半导体学报 29.10(2008):1988-1991.
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