SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
以金属为缓冲层在Si(111)上分子束外延GaN及其表征
林郭强; 曾一平; 王晓亮; 刘宏新
2008
Source Publication半导体学报
Volume29Issue:10Pages:1998-2002
Abstract用电子束蒸发方法在Si(111)衬底上蒸发了Au/Cr和Au/Ti/Al/Ti两种金属缓冲层,然后在金属缓冲层上用气源分子束外延(GSMBE)生长GaN.两种缓冲层的表面都比较平整和均匀,都是具有Au(111)面择优取向的立方相Au层.在Au/Cr/Si(111)上MBE生长的GaN,生长结束后出现剥离.在Au/Ti/Al/Ti/Si(111)上无AlN缓冲层直接生长GaN,得到的是多晶GaN;先在800℃生长一层AlN缓冲层,然后在710℃生长GaN,得到的是沿GaN(0001)面择优取向的六方相GaN.将Au/Ti/Al/Ti/Si(111)在800℃下退火20min,金属层收缩为网状结构,并且成为多晶,不再具有Au(111)方向择优取向.
metadata_83中国科学院半导体研究所材料科学中心
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:3399359
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15937
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
林郭强,曾一平,王晓亮,等. 以金属为缓冲层在Si(111)上分子束外延GaN及其表征[J]. 半导体学报,2008,29(10):1998-2002.
APA 林郭强,曾一平,王晓亮,&刘宏新.(2008).以金属为缓冲层在Si(111)上分子束外延GaN及其表征.半导体学报,29(10),1998-2002.
MLA 林郭强,et al."以金属为缓冲层在Si(111)上分子束外延GaN及其表征".半导体学报 29.10(2008):1998-2002.
Files in This Item:
File Name/Size DocType Version Access License
3798.pdf(907KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[林郭强]'s Articles
[曾一平]'s Articles
[王晓亮]'s Articles
Baidu academic
Similar articles in Baidu academic
[林郭强]'s Articles
[曾一平]'s Articles
[王晓亮]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[林郭强]'s Articles
[曾一平]'s Articles
[王晓亮]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.