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基于图形衬底的InAs/GaAs量子点和量子环液滴外延
赵暕; 陈涌海; 王占国; 徐波
2008
Source Publication半导体学报
Volume29Issue:10Pages:2003-2008
Abstract液滴外延生长半导体材料是一种较为新颖的MBE生长技术,而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果.作者在GaAsμm级别图形衬底上进行了InAs的液滴外延生长,并在不同结构的图形衬底上得到了不同的InAs量子点和量子环生长结果.基于生长结果,分析了图形衬底对液滴外延的影响和液滴外延下量子点和量子环的形成机制以及分布规律.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划(批准号
Indexed ByCSCD
Language中文
CSCD IDCSCD:3399360
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15935
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
赵暕,陈涌海,王占国,等. 基于图形衬底的InAs/GaAs量子点和量子环液滴外延[J]. 半导体学报,2008,29(10):2003-2008.
APA 赵暕,陈涌海,王占国,&徐波.(2008).基于图形衬底的InAs/GaAs量子点和量子环液滴外延.半导体学报,29(10),2003-2008.
MLA 赵暕,et al."基于图形衬底的InAs/GaAs量子点和量子环液滴外延".半导体学报 29.10(2008):2003-2008.
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