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单光子源低密度长波长InAs/GaAs量子点的制备
方志丹; 崔碧峰; 黄社松; 倪海桥; 邢艳辉; 牛智川
2008
Source Publication功能材料与器件学报
Volume14Issue:5Pages:915-918
Abstract通过优化分子束外延生长条件,得到室温发光在1300nm低密度的自组织InAs/GaAs量子点。使用极低的InAs生长速率(0.001单层/秒)可以把量子点的密度降低到4×10~6cm~(-2)。这些结果使得InAs/GaAs量子点可以作为单光子源应用在未来的光纤基量子密码、量子通信中。
metadata_83北京工业大学光电子技术实验室;中国科学院半导体研究所
Subject Area半导体物理
Funding Organization中国博士后科学基金资助项目(No.2 6 39 385)
Indexed ByCSCD
Language中文
CSCD IDCSCD:3413223
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15919
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
方志丹,崔碧峰,黄社松,等. 单光子源低密度长波长InAs/GaAs量子点的制备[J]. 功能材料与器件学报,2008,14(5):915-918.
APA 方志丹,崔碧峰,黄社松,倪海桥,邢艳辉,&牛智川.(2008).单光子源低密度长波长InAs/GaAs量子点的制备.功能材料与器件学报,14(5),915-918.
MLA 方志丹,et al."单光子源低密度长波长InAs/GaAs量子点的制备".功能材料与器件学报 14.5(2008):915-918.
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