SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1300 nm超辐射发光二极管寿命测试
孙孟相; 谭满清; 王鲁峰
2008
Source Publication光学学报
Volume28Issue:10Pages:1994-1997
Abstract作为光纤陀螺用光源的超辐射发光二极管(SLD)随着工作时间的延续,其性能会发生退化。采用加速老化的实验方法来估算InGaAsP SLD管芯的工作寿命。分别在环境温度373 K和358 K下对5只SLD管芯进行加速老化,并通过对P-t曲线拟合来推算和估计管芯的老化速率和激活能。计算出了器件的激活能平均值约为0.82 eV,SLD管芯在室温下的工作寿命超过10~6 h,可以满足光纤陀螺用光源的寿命要求。对影响SLD管芯可靠性的因素以及管芯的退化机理进行了分析,为研制高可靠性的超辐射发光二极管提供了理论基础。
metadata_83中国科学院半导体研究所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:3433885
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15903
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙孟相,谭满清,王鲁峰. 1300 nm超辐射发光二极管寿命测试[J]. 光学学报,2008,28(10):1994-1997.
APA 孙孟相,谭满清,&王鲁峰.(2008).1300 nm超辐射发光二极管寿命测试.光学学报,28(10),1994-1997.
MLA 孙孟相,et al."1300 nm超辐射发光二极管寿命测试".光学学报 28.10(2008):1994-1997.
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