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InGaAs/InAlAs雪崩光电二极管仿真设计
曹延名; 吴孟; 杨富华
2008
Source Publication激光与光电子学进展
Volume45Issue:9Pages:56-60
Abstract设计了一种InGaAs/InAlAs雪崩光电二极管(APD),并利用MEDICI软件进行了模拟仿真。器件采用背入射探测方式。雪崩增益区采用埋层设计,省略了保护环等结构;并使用双层掺杂,有效降低了增益区电场的梯度变化。由于结构简单,因此仅需要利用分子束外延(MBE)生长精确控制每层结构即可。由于InAlAs材料的空穴与电子的离化率有较大的差异,因此器件具有较低的噪声因子。
metadata_83中国科学院半导体研究所;中国科学院导体研究所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:3444219
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15897
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曹延名,吴孟,杨富华. InGaAs/InAlAs雪崩光电二极管仿真设计[J]. 激光与光电子学进展,2008,45(9):56-60.
APA 曹延名,吴孟,&杨富华.(2008).InGaAs/InAlAs雪崩光电二极管仿真设计.激光与光电子学进展,45(9),56-60.
MLA 曹延名,et al."InGaAs/InAlAs雪崩光电二极管仿真设计".激光与光电子学进展 45.9(2008):56-60.
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