SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD
CAI Fangfang; WEI Hongyan; FAN Haibo; YANG Anli; ZHANG Panfeng; LIU Xianglin
2008
Source Publication人工晶体学报
Volume37Issue:6Pages:1401-1405
AbstractZnO nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition (MOCVD). The diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process. Measurements such as scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering and photoluminescence (pL) spectrum were employed to analyze the differences of these nanorods. It was found that when both carrier gas flux of Zn and O reactant are 1 SLM, we can obtain the best vertically aligned and uniform nanorods. Furthermore, the PL spectrum reveals a blueshift of UV emission peak, which may be assigned to the increase of surface effect.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding OrganizationProject supported by the Special Funds for Major State Basic Research Project(973 program )of China( No. 2 6CB6 49 7)
Indexed ByCSCD
Language英语
CSCD IDCSCD:3450602
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15893
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
CAI Fangfang,WEI Hongyan,FAN Haibo,et al. Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD[J]. 人工晶体学报,2008,37(6):1401-1405.
APA CAI Fangfang,WEI Hongyan,FAN Haibo,YANG Anli,ZHANG Panfeng,&LIU Xianglin.(2008).Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD.人工晶体学报,37(6),1401-1405.
MLA CAI Fangfang,et al."Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD".人工晶体学报 37.6(2008):1401-1405.
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