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题名: Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD
作者: CAI Fangfang;  WEI Hongyan;  FAN Haibo;  YANG Anli;  ZHANG Panfeng;  LIU Xianglin
发表日期: 2008
摘要: ZnO nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition (MOCVD). The diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process. Measurements such as scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering and photoluminescence (pL) spectrum were employed to analyze the differences of these nanorods. It was found that when both carrier gas flux of Zn and O reactant are 1 SLM, we can obtain the best vertically aligned and uniform nanorods. Furthermore, the PL spectrum reveals a blueshift of UV emission peak, which may be assigned to the increase of surface effect.
刊名: 人工晶体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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CAI Fangfang;WEI Hongyan;FAN Haibo;YANG Anli;ZHANG Panfeng;LIU Xianglin.Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD,人工晶体学报,2008,37(6):1401-1405
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