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8×8重排无阻塞型SOI热光波导开关阵列
陈媛媛; 余金中
2009
Source Publication激光与红外
Volume39Issue:1Pages:46-49
Abstract设计并制作了一种重排无阻塞型的8×8 SOI热光波导开关阵列。开关单元采用了MM I-MZI结构的2×2光开关。整个器件的开关时间约为2μs。器件中开关单元功耗小于240mW。消光比在17~22dB范围内变化。功耗和开关速度都明显优于SiO2基和聚合物基的开关阵列。
metadata_83北京工商大学信息工程学院;中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:3489796
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15873
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈媛媛,余金中. 8×8重排无阻塞型SOI热光波导开关阵列[J]. 激光与红外,2009,39(1):46-49.
APA 陈媛媛,&余金中.(2009).8×8重排无阻塞型SOI热光波导开关阵列.激光与红外,39(1),46-49.
MLA 陈媛媛,et al."8×8重排无阻塞型SOI热光波导开关阵列".激光与红外 39.1(2009):46-49.
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