SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs/GaAs量子点光致发光光谱多峰结构发光本质
梁志梅; 吴巨; 金鹏; 吕雪芹; 王占国
2008
Source Publication半导体学报
Volume29Issue:11Pages:2121-2124
Abstract研究了InAs/GaAs量子点光致发光光谱中出现的多峰结构.观察到随着激发功率的增加光谱中发光峰的数目逐渐增多并且部分发光峰的峰位随激发功率的增加向高能量方向移动.解释了各发光峰的来源并结合量子点能级结构的特点,计算了量子点中电子和空穴各子带间的能级间距.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家重点基础研究发展计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:3496206
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15867
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
梁志梅,吴巨,金鹏,等. InAs/GaAs量子点光致发光光谱多峰结构发光本质[J]. 半导体学报,2008,29(11):2121-2124.
APA 梁志梅,吴巨,金鹏,吕雪芹,&王占国.(2008).InAs/GaAs量子点光致发光光谱多峰结构发光本质.半导体学报,29(11),2121-2124.
MLA 梁志梅,et al."InAs/GaAs量子点光致发光光谱多峰结构发光本质".半导体学报 29.11(2008):2121-2124.
Files in This Item:
File Name/Size DocType Version Access License
3758.pdf(454KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[梁志梅]'s Articles
[吴巨]'s Articles
[金鹏]'s Articles
Baidu academic
Similar articles in Baidu academic
[梁志梅]'s Articles
[吴巨]'s Articles
[金鹏]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[梁志梅]'s Articles
[吴巨]'s Articles
[金鹏]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.