SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs基短周期InAs/GaSb超晶格红外探测器研究
郭杰; 彭震宇; 鲁正雄; 孙维国; 郝瑞亭; 周志强; 许应强; 牛智川
2009
Source Publication红外与毫米波学报
Volume28Issue:3Pages:165-167
Abstract采用分子束外延(MBE)方法,在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb (2ML/8ML)和InAs/GaSb (8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2(A)和57.3(A).室温红外透射光谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触,制备了短波和中波的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试,77K下,50%截止波长分别为2.1μm和5.0μm,黑体探测率D~·_(bb)均超过2×10~8cmHz~(1/2)/W.室温下短波探测器D~·_(bb)超过10~8cmHz~(1/2)/W.
metadata_83西北工业大学,材料学院;洛阳光电技术发展中心;中科院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:3529945
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15823
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郭杰,彭震宇,鲁正雄,等. GaAs基短周期InAs/GaSb超晶格红外探测器研究[J]. 红外与毫米波学报,2009,28(3):165-167.
APA 郭杰.,彭震宇.,鲁正雄.,孙维国.,郝瑞亭.,...&牛智川.(2009).GaAs基短周期InAs/GaSb超晶格红外探测器研究.红外与毫米波学报,28(3),165-167.
MLA 郭杰,et al."GaAs基短周期InAs/GaSb超晶格红外探测器研究".红外与毫米波学报 28.3(2009):165-167.
Files in This Item:
File Name/Size DocType Version Access License
3736.pdf(476KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[郭杰]'s Articles
[彭震宇]'s Articles
[鲁正雄]'s Articles
Baidu academic
Similar articles in Baidu academic
[郭杰]'s Articles
[彭震宇]'s Articles
[鲁正雄]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[郭杰]'s Articles
[彭震宇]'s Articles
[鲁正雄]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.