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Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光
廖凌宏; 周志文; 李成; 陈松岩; 赖虹凯; 余金中; 王启明
2009
Source Publication材料科学与工程学报
Volume27Issue:1Pages:146-149
Abstract由于Si/SiGe异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基Si_(1-x) Ge_x虚衬底上外延应变补偿的Si/S_(1-y) Ge_y(y>x)量子阱的能带结构,将量子阱对电子的限制势垒提高到100meV以上.在实验上,采用300℃生长的Ge量子点插入层,制备出薄的SiGe驰豫缓冲层(虚衬底),表面Ge组份达到0.25,表面粗糙度小于2nm,驰豫度接近100%.在我们制备的SiGe缓冲层上外延了应变补偿SiGe/Si多量子阱结构,并初步研究了其发光特性.
metadata_83厦门大学物理系;中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家重点基础研究发展计划资助项目,国家自然科学基金赍助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:3559228
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15795
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
廖凌宏,周志文,李成,等. Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光[J]. 材料科学与工程学报,2009,27(1):146-149.
APA 廖凌宏.,周志文.,李成.,陈松岩.,赖虹凯.,...&王启明.(2009).Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光.材料科学与工程学报,27(1),146-149.
MLA 廖凌宏,et al."Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光".材料科学与工程学报 27.1(2009):146-149.
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